IndiumV3, Main, Repository, bibRecord, 000F19

E1(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering

Identifieur interne : 000F19 ( Main/Repository ); précédent : 000F18; suivant : 000F20

E1(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering

Auteurs : RBID : Pascal:13-0255284

Descripteurs français

Pascal (Inist)
- Bande interdite, Propriété électronique, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Nanofil, Nanomatériau, Diffusion Raman, Spectrométrie Raman, Structure bande, Haute pression, Effet pression, Résonance, Zinc, InAs, Substrat wurtzite, Zn, 7321, 8107V, 8107B.
Wicri :
- concept : Zinc.

English descriptors

KwdEn :
- Band structure, Electronic properties, Energy gap, High pressure, III-V compound, III-V semiconductors, Indium arsenides, Nanostructured materials, Nanowires, Pressure effects, Raman scattering, Raman spectroscopy, Resonance, Zinc.

Abstract

We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimuthal study of the Raman spectra with two laser excitation lines (2.41 and 1.92 eV) has also been performed on a single wire. The measured E₂^H mode resonance indicates that the E₁(A) gap is about 2.4 eV, which is considerably reduced with respect to the zinc-blende InAs E₁ gap. These findings confirm recent theoretical calculations of crystal phase induced bandstructure modifications.

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Pascal:13-0255284

Le document en format XML

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(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering</title>
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<author><name sortKey="Mangialardo, Sara" uniqKey="Mangialardo S">Sara Mangialardo</name>
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<author><name sortKey="Morkotter, Stefanie" uniqKey="Morkotter S">Stefanie Morkötter</name>
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<author><name sortKey="Koblm Ller, Gregor" uniqKey="Koblm Ller G">Gregor Koblm Ller</name>
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<author><name sortKey="Postorino, Paolo" uniqKey="Postorino P">Paolo Postorino</name>
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<author><name sortKey="Abstreiter, Gerhard" uniqKey="Abstreiter G">Gerhard Abstreiter</name>
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<term>High pressure</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Pressure effects</term>
<term>Raman scattering</term>
<term>Raman spectroscopy</term>
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<term>Zinc</term>
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<term>7321</term>
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<front><div type="abstract" xml:lang="en">We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimuthal study of the Raman spectra with two laser excitation lines (2.41 and 1.92 eV) has also been performed on a single wire. The measured E<sub>2</sub>
<sup>H</sup>
 mode resonance indicates that the E<sub>1</sub>
(A) gap is about 2.4 eV, which is considerably reduced with respect to the zinc-blende InAs E<sub>1</sub>
 gap. These findings confirm recent theoretical calculations of crystal phase induced bandstructure modifications.</div>
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<sup>H</sup>
 mode resonance indicates that the E<sub>1</sub>
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<fC03 i1="06" i2="3" l="FRE"><s0>Nanofil</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Nanowires</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Diffusion Raman</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Raman scattering</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Difusión Ramán</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Spectrométrie Raman</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Raman spectroscopy</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Structure bande</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Band structure</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Haute pression</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>High pressure</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Effet pression</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Pressure effects</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Résonance</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Resonance</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Zinc</s0>
<s2>NC</s2>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Zinc</s0>
<s2>NC</s2>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Substrat wurtzite</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Zn</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7321</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>245</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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E1(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering

E1(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering

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